Hanyong Eom

Learn More
The impact of the Reverse Short Channel Effect (RSCE) on device current is stronger in the subthreshold region due to the reduced Drain-Induced-Barrier-Lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current,(More)
Subthreshold circuit designs have been demonstrated to be a successful alternative when ultra-low power consumption is paramount. However, the characteristics of MOS transistors in the subthreshold regime are significantly different from those in strong-inversion. This presents new challenges in design optimization, particularly in complex gates with stacks(More)
A fact that has generally been unnoticed is that sleep transistors for leakage reduction can significantly damp the resonant supply noise due to their series resistance. This paper describes an optimal sleep transistor sizing method considering the dominant resonant supply noise. We show that a smaller sleep transistor can offer a smaller worst case supply(More)
—Subthreshold circuit designs have been demonstrated to be a successful alternative when ultra-low power consumption is paramount. However, the characteristics of MOS transistors in the subthreshold region are significantly different from those in strong-inversion. This presents new challenges in design optimization— particularly in complex gates with(More)
  • 1