Hann-Huei Tsai

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This paper presents a time delay and integration (TDI) structure for CMOS image sensor (CIS) with adjacent pixel signal transfer (APST). The CCD-like TDI function is achieved in CIS by proposed APST without additional in-pixel device and minimum routing effort. The in-pixel integrated signal is transferred to adjacent pixel and summed up by an off-pixel(More)
Cantilever sensors have been extensively explored as a promising technique for real-time and label-free analyses in biological systems. A major sensing principle utilized by state-of-the-art cantilever sensors is based on analyte-induced surface stress changes, which result in static bending of a cantilever. The sensor performance, however, suffers from the(More)
This paper presents a highly-integrated DNA detection SoC, where several kinds of cantilever DNA sensors, a readout circuit, an MCU, voltage regulators, and a wireless transceiver, are integrated monolithically in a 0.35 μm CMOS Bio-MEMS process. The cantilever-based biosensors with embedded piezoresistors aim to transduce DNA hybridization into resistance(More)
Polysilicon nanowire (poly-Si NW) based biosensor is integrated with the wireless acquisition circuits in a standard CMOS SoC for the first time. To improve detection quality, a chopper DDA-based analog front-end with features of low noise, high CMRR, and rail-to-rail input range is implemented. Additional temperature sensor is also included to compensate(More)
In this paper, a power-efficient programmable gain amplifier (PGA) and a cyclic analog-to-digital converter (ADC) are developed for a satellite CMOS image sensor system. The cyclic ADC employs capacitor and opamp reuse techniques to reduce power consumption and occupied silicon area. Moreover, a power-efficient and wide-bandwidth telescopic cascode gain(More)
Abstract Tri-gate bulk MOSFETs are realized using a simple shallow-trench-isolation (STI) oxide recess approach. The trigate structure together with a retrograde body doping profile provides for superior electrostatic integrity, particularly for narrow fin widths, to reduce variability in transistor performance. The benefits of tri-gate bulk MOSFET(More)