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Highly cost effective and high speed 72M bit density S3 SRAM technology was successfully achieved for standalone memory and embedded memory with selective epitaxial growth of Si films, low thermal(More)
In order to meet the great demands for higher density SRAM in all area of SRAM applications, the 25F/sup 2/S/sup 3/ (stacked single-crystal Si ) SRAM cell, which is a truly 3-dimensional device by(More)
For the first time, the 65nm high performance transistor technology and the highly compacted double stacked S/sup 3/ SRAM cell with a size of 25F/sup 2/, and 0.16/spl mu/m/sup 2/ has been combined(More)
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