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—Process parameter variations are expected to be significantly high in a sub-50-nm technology regime, which can severely affect the yield, unless very conservative design techniques are employed. The parameter variations are random in nature and are expected to be more pronounced in minimum geometry transistors commonly used in memories such as SRAM.(More)
—In this paper, we have analyzed and modeled failure probabilities (access-time failure, read/write failure, and hold failure) of synchronous random-access memory (SRAM) cells due to process-parameter variations. A method to predict the yield of a memory chip based on the cell-failure probability is proposed. A methodology to statistically design the SRAM(More)
In this paper, we have analyzed and modeled the failure probabilities of SRAM cells due to process parameter variations. A method to predict the yield of a memory chip based on the cell failure probability is proposed. The developed method is used in an early stage of a design cycle to minimize memory failure probability by statistically sizing of SRAM(More)
Due to exponential increase in subthreshold leakage with technology scaling and temperature increase, leakage power is becoming a major fraction of total power in the active mode. We present a novel low-cost design methodology with associated synthesis flow for reducing both switching and active leakage power using dynamic supply gating. A logic synthesis(More)
In this paper, we have made a complete analysis of the emerging SRAM failure mechanisms due to process variations and mapped them to fault models. We have proposed two efficient test solutions for the process variation related failures in SRAM: (a) modification of March sequence, and (b) a novel low-overhead DFT circuit to complement the March test for an(More)
—A leakage-tolerant design technique for high fan-in dynamic logic circuits is presented. An NMOS transistor with gate and drain terminals tied together (diode) is added in series with the evaluation network of standard domino circuits. Due to the stacking effect, the leakage of the evaluation path significantly decreases, thereby improving the robustness(More)
Double-gate (DG) transistors have emerged as promising devices for nano-scale circuits due to their better scalability compared to bulk CMOS. Among the various types of DG devices, quasi-planar SOI FinFETs are easier to manufacture compared to planar double-gate devices. DG devices with independent gates (separate contacts to back and front gates) have(More)
1. Introduction Double-gate SO1 MOSFETs (DGMOS) have been shown to he very scalable due to less short channel effects and intrinsic body (no random dopant fluctuations effect) [l]. In DGMOS transistors, usually hack and front gates are connected together (connected front and back gates) to achieve more ON current (Ion) and reduce short-channel effects.(More)
— As dimensions of MOS devices have been scaled down, new reliability problems are coming into effect. One of these emerging reliability issues is aging effects which result in device performance degradation over time. NBTI (Negative biased temperature instability) is a well known aging phenomenon which is a limiting factor for future scaling of devices.(More)
In this paper several low power full adder topologies are presented. The main idea of these circuits is based on the sense energy recovery full adder (SERF) design and the GDI (Gate diffusion input) technique. These subthreshold circuits are employed for ultra low power applications. While the proposed circuits have some area overhead that is negligible,(More)