Hamid Mahmoodi

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In this paper, we have analyzed and modeled failure probabilities (access-time failure, read/write failure, and hold failure) of synchronous random-access memory (SRAM) cells due to process-parameter variations. A method to predict the yield of a memory chip based on the cell-failure probability is proposed. A methodology to statistically design the SRAM(More)
Process parameter variations are expected to be significantly high in a sub-50-nm technology regime, which can severely affect the yield, unless very conservative design techniques are employed. The parameter variations are random in nature and are expected to be more pronounced in minimum geometry transistors commonly used in memories such as SRAM.(More)
A significant fraction of the total power in highly synchronous systems is dissipated over clock networks. Hence, low-power clocking schemes are promising approaches for low-power design. We propose four novel energy recovery clocked flip-flops that enable energy recovery from the clock network, resulting in significant energy savings. The proposed(More)
A leakage-tolerant design technique for high fan-in dynamic logic circuits is presented. An NMOS transistor with gate and drain terminals tied together (diode) is added in series with the evaluation network of standard domino circuits. Due to the stacking effect, the leakage of the evaluation path significantly decreases, thereby improving the robustness of(More)
In this paper, we have made a complete analysis of the emerging SRAM failure mechanisms due to process variations and mapped them to fault models. We have proposed two efficient test solutions for the process variation related failures in SRAM: (a) modification of March sequence, and (b) a low-overhead DFT circuit to complement the March test for an overall(More)
Two simple structures of low-power dual-edge triggered static pulsed flip-flops (DSPFF) are presented in this paper. They are composed of a dual-edge pulse generator and a static flip-flop with equal toggling delays. The static feature of DSPFF avoids unnecessary internal node transitions to reduce power consumption. Simple structure of pulse generator with(More)
With technology scaling, soft error resilience is becoming a major concern in circuit design. This paper presents a class of low-overhead flip-flops suitable for soft error detection and correction. The proposed design reuses logic elements typically available in a standard-cell implementation of a flip-flop to reduce hardware overhead. We demonstrate that(More)
In this paper, we present a postsilicon-tuning technique to improve parametric yield of SRAM array using body bias (BB). First, we show that, although parametric failures in SRAM are due to local random intradie variations, the parametric failures increase at extreme interdie corners. Next, we show that proper BB can reduce different types of parametric(More)
We have analyzed and modeled the failure probabilities of SRAM cells due to process parameter variations. A method to predict the yield of a memory chip based on the cell failure probability is proposed. The developed method is used in an early stage of a design cycle to minimize memory failure probability by statistically sizing of SRAM cell.
Reduction in test power is important to improve battery lifetime in portable electronic devices employing periodic self-test, to increase reliability of testing, and to reduce test cost. In scan-based testing, a significant fraction of total test power is dissipated in the combinational block. In this paper, we present a novel circuit technique to virtually(More)