Learn More
In this paper, we have analyzed and modeled failure probabilities (access-time failure, read/write failure, and hold failure) of synchronous random-access memory (SRAM) cells due to process-parameter variations. A method to predict the yield of a memory chip based on the cell-failure probability is proposed. A methodology to statistically design the SRAM(More)
—Process parameter variations are expected to be significantly high in a sub-50-nm technology regime, which can severely affect the yield, unless very conservative design techniques are employed. The parameter variations are random in nature and are expected to be more pronounced in minimum geometry transistors commonly used in memories such as SRAM.(More)
In this paper several low power full adder topologies are presented. The main idea of these circuits is based on the sense energy recovery full adder (SERF) design and the GDI (Gate diffusion input) technique. These subthreshold circuits are employed for ultra low power applications. While the proposed circuits have some area overhead that is negligible,(More)
—A significant fraction of the total power in highly synchronous systems is dissipated over clock networks. Hence, low-power clocking schemes are promising approaches for low-power design. We propose four novel energy recovery clocked flip-flops that enable energy recovery from the clock network, resulting in significant energy savings. The proposed(More)
—A leakage-tolerant design technique for high fan-in dynamic logic circuits is presented. An NMOS transistor with gate and drain terminals tied together (diode) is added in series with the evaluation network of standard domino circuits. Due to the stacking effect, the leakage of the evaluation path significantly decreases, thereby improving the robustness(More)
The high leakage current in deep submicron regimes is becoming a significant contributor to the power dissipation of CMOS circuits as the threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for the estimation and reduction of leakage power,(More)
Due to exponential increase in subthreshold leakage with technology scaling and temperature increase, leakage power is becoming a major fraction of total power in the active mode. We present a novel low-cost design methodology with associated synthesis flow for reducing both switching and active leakage power using dynamic supply gating. A logic synthesis(More)
1. Introduction Double-gate SO1 MOSFETs (DGMOS) have been shown to he very scalable due to less short channel effects and intrinsic body (no random dopant fluctuations effect) [l]. In DGMOS transistors, usually hack and front gates are connected together (connected front and back gates) to achieve more ON current (Ion) and reduce short-channel effects.(More)
We have analyzed and modeled the failure probabilities of SRAM cells due to process parameter variations. A method to predict the yield of a memory chip based on the cell failure probability is proposed. The developed method is used in an early stage of a design cycle to minimize memory failure probability by statistically sizing of SRAM cell.
In this paper, we have made a complete analysis of the emerging SRAM failure mechanisms due to process variations and mapped them to fault models. We have proposed two efficient test solutions for the process variation related failures in SRAM: (a) modification of March sequence, and (b) a novel low-overhead DFT circuit to complement the March test for an(More)