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We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. We also present data on the susceptibility of parts to functional degradation resulting from total ionizing dose at low dose rates (0.003–4.52 rads(Si)/s).
We present heavy ion and proton single event effect (SEE) as well as radiation damage ground test results for candidate spacecraft electronics. Microelectronics tested include digital, analog, and hybrid devices.
We present the results of single event effects (SEE) testing and investigating the effects of space radiation on electronics. This paper is a summary of test results.
We present the results of single event effects testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
We present data on recent optocoupler in-flight anomalies and the subsequent ground test irradiation performed. Discussions of the single event mechanisms involved, transient filtering analysis, and design implications are included. Proton-induced transients were observed on higher speed optocouplers with a unique dependence on the incidence particle angle.… (More)
Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various hardened and commercial power metal-oxide-semiconductor field effect transistors (MOSFETs), including vertical planar, trench, superjunction, and lateral process designs.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS differential amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs, with relatively low LET thresholds (LETth). The LTC6400 exhibits a LETth < 7.4 MeV•cm2/mg for… (More)
A number of electronic devices have been tested for sensitivity to single event effects for space applications by Ball Aerospace & Technologies Corp. and collaborators. Test conditions and results are presented for each device.