Hai-fan Hu

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In this paper, a split-gate resurf stepped oxide (RSO) vertical UMOSFET with p-pillar under the p+ plug region structure is proposed. The p-pillar could modulate the electric field of the drift region with the split-gate in 3-D and simultaneously brings electric field peaks at the sidewall junction between p-pillar and n-drift region. Thus the splitgate(More)
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