Hai-Sheng Lu

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CoMo alloys as copper diffusion barriers were investigated in this work. The thermal stability was studied after annealing, which was measured by FPP, XRD, SEM and AES. According to the electrical test, we carried out a new p-cap structure to measure. The breakdown electrical field and C-V properties were measured at 150°C. Both the thermal test and(More)
The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k=2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical(More)
The direct electroplating of copper film on an ultrathin cobalt film in the alkaline bath was investigated. The plating bath consists of CuSO<sub>4</sub>&#x00B7;5H<sub>2</sub>O and ethylenediamine. It is found that the ethylenediamine can well stop the cobalt reaction with copper ion and make the copper deposition on cobalt possible. The experimental(More)
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