Hadis Morkoç

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In pursuit of improved optoelectronic devices, current experimental efforts to achieve p-type ZnO are examined along with techniques for testing GaN and ZnO doped with magnetic ions. ABSTRACT | ZnO has gained considerable interest recently as a promising material for a variety of applications. To a large extent, the renewed interest in ZnO is fuelled by its(More)
— Although started as red indicator lights based on the GaP:N system, replacing only the nixie (Numeric Indicator eXperimental No. 1) tube, LEDs have become quite a high performance device of late and are revolutionizing the display and illumination sectors of our economy. Presently, the GaN based light emitters adorn the automobiles, traffic lights, moving(More)
The possible importance of zinc-oxide-based optoelectronic devices is reviewed in this paper, which places special emphasis on the need to achieve p-type ZnO. ABSTRACT | ZnO is an attractive material for applications in electronics, photonics, acoustics, and sensing. In optical emitters, its high exciton binding energy (60 meV) gives ZnO an edge over other(More)
T his special issue spawned from mainly the motivation used by the scientific community in regard to potential applications of ZnO to electronic and optoelec-tronic devices which seemingly are centering about device applications already addressed by GaN to a large extent. The late Dr. Cole W. Litton (Fig. 1) successfully made the case that a small group of(More)