Hadis Morkoç

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Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E 1 ϭ0. are interpreted as corresponding to deep levels previously reported in n-GaN grown by both hydride vapor-phase epitaxy and metal organic(More)
In pursuit of improved optoelectronic devices, current experimental efforts to achieve p-type ZnO are examined along with techniques for testing GaN and ZnO doped with magnetic ions. ABSTRACT | ZnO has gained considerable interest recently as a promising material for a variety of applications. To a large extent, the renewed interest in ZnO is fuelled by its(More)
The possible importance of zinc-oxide-based optoelectronic devices is reviewed in this paper, which places special emphasis on the need to achieve p-type ZnO. ABSTRACT | ZnO is an attractive material for applications in electronics, photonics, acoustics, and sensing. In optical emitters, its high exciton binding energy (60 meV) gives ZnO an edge over other(More)
— Although started as red indicator lights based on the GaP:N system, replacing only the nixie (Numeric Indicator eXperimental No. 1) tube, LEDs have become quite a high performance device of late and are revolutionizing the display and illumination sectors of our economy. Presently, the GaN based light emitters adorn the automobiles, traffic lights, moving(More)