Hadis Morkoç

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The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic semiconductors (DMSs) and oxides, and later in (Ga,Mn)As materials has inspired a great deal of research interest in a field dubbed “spintronics” of late, which could pave the way to exploit spin in addition to charge in semiconductor devices. The main challenge for practical(More)
| ZnO is an attractive material for applications in electronics, photonics, acoustics, and sensing. In optical emitters, its high exciton binding energy (60 meV) gives ZnO an edge over other semiconductors such as GaN if reproducible and reliable p-type doping in ZnO were to be achieved, which currently remains to be the main obstacle for realization of(More)
Although started as red indicator lights based on the GaP:N system, replacing only the nixie (Numeric Indicator eXperimental No. 1) tube, LEDs have become quite a high performance device of late and are revolutionizing the display and illumination sectors of our economy. Presently, the GaN based light emitters adorn the automobiles, traffic lights, moving(More)
Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by(More)
ZnO has gained considerable interest recently as a promising material for a variety of applications. To a large extent, the renewed interest in ZnO is fuelled by its wide direct band gap (3.3 eV at room temperature) and large exciton binding energy (60 meV) making this material, when alloyed with e.g. Cd and Mg, especially attractive for light emitters in(More)