Learn More
The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic semiconductors (DMSs) and oxides, and later in (Ga,Mn)As materials has inspired a great deal of research interest in a field dubbed " spintronics " of late, which could pave the way to exploit spin in addition to charge in semiconductor devices. The main challenge for practical(More)
The possible importance of zinc-oxide-based optoelectronic devices is reviewed in this paper, which places special emphasis on the need to achieve p-type ZnO. ABSTRACT | ZnO is an attractive material for applications in electronics, photonics, acoustics, and sensing. In optical emitters, its high exciton binding energy (60 meV) gives ZnO an edge over other(More)
Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by(More)
— Although started as red indicator lights based on the GaP:N system, replacing only the nixie (Numeric Indicator eXperimental No. 1) tube, LEDs have become quite a high performance device of late and are revolutionizing the display and illumination sectors of our economy. Presently, the GaN based light emitters adorn the automobiles, traffic lights, moving(More)
The development and application of nitride-based light-emitting diodes (LEDs) is hindered by the low hole conductivity of Mg-doped layers. As an alternative, polarization-induced hole doping of graded p-AlGaN layers was recently demonstrated. Using previously manufactured 440nm LEDs as device examples, this paper evaluates the effect of polarization doping(More)
Room-temperature continuous-wave operation of large-area (120 microm x 980 microm) GaAs/AlGaAs graded-refractive-index separate-confinement heterostructure lasers on (100) Si substrates has been obtained. Minimum threshold-current densities of 214 A/cm(2) (1900-microm cavity length), maximum slope efficiencies of about 0.8 W/A (600-microm cavity length),(More)