Hadis Morkoç

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Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E 1 ϭ0. are interpreted as corresponding to deep levels previously reported in n-GaN grown by both hydride vapor-phase epitaxy and metal organic(More)
In pursuit of improved optoelectronic devices, current experimental efforts to achieve p-type ZnO are examined along with techniques for testing GaN and ZnO doped with magnetic ions. ABSTRACT | ZnO has gained considerable interest recently as a promising material for a variety of applications. To a large extent, the renewed interest in ZnO is fuelled by its(More)
— Although started as red indicator lights based on the GaP:N system, replacing only the nixie (Numeric Indicator eXperimental No. 1) tube, LEDs have become quite a high performance device of late and are revolutionizing the display and illumination sectors of our economy. Presently, the GaN based light emitters adorn the automobiles, traffic lights, moving(More)
The possible importance of zinc-oxide-based optoelectronic devices is reviewed in this paper, which places special emphasis on the need to achieve p-type ZnO. ABSTRACT | ZnO is an attractive material for applications in electronics, photonics, acoustics, and sensing. In optical emitters, its high exciton binding energy (60 meV) gives ZnO an edge over other(More)