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- Publications
- Influence
Fully Integrated 56 nm DRAM Technology for 1 Gb DRAM
- Y.K. Park, S. Lee, +21 authors W.S. Lee
- Materials Science
- IEEE Symposium on VLSI Technology
- 12 June 2007
A 56 nm feature sized 1 Gb DRAM technology is successfully developed using ArF immersion lithography with a novel integration scheme. The cell size is 0.019 mum, which is the smallest one ever… Expand