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Journals and Conferences
Low Noise GaAs FETs were fabricated on an active layer produced by implantation into a semi-insulating substrate. Silicon was implanted at relatively low energy to give a very shallow, steep profile.… (More)
In most high performance microwave GaAs MESFETs, gate metal resistance contributes significantly to the noise figure. One solution to this problem is to parallel many short gate sections and to do… (More)