• Publications
  • Influence
A 64Mb MRAM with clamped-reference and adequate-reference schemes
tl;dr
In order to realize a sub-Giga bit scale NVRAM, the novel MRAM based on the spin-transfer-torque (STT) switching has been intensively investigated due to its excellent scalability compared with a conventional magnetic field induce switching MRAM . Expand
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  • Open Access
Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy
Spin transfer (ST) switching in the TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junction (MTJ) was studied. The TbCoFe∕CoFeB free layer with a large coercive field of 1.2kOe and a large thermalExpand
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Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)
Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss byExpand
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Ion Beam Etching Technology for High-Density Spin Transfer Torque Magnetic Random Access Memory
A spin transfer torque magnetoresistive random access memory (STT-MRAM) is the most promising candidate for a non-volatile random access memory, because of its scalability, high-speed operation, andExpand
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High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs
Abstract An Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9 μA was obtained for a write current width of 5 ms. TheExpand
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The progresses of MRAM as a memory to save energy consumption and its potential for further reduction
tl;dr
Critical switching current, I<sub>sw</sub>, of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with perpendicular MTJ and the state-of-the-art write charge, Q< sub>w</sub), becomes the order of 100-150fC. Expand
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High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code
tl;dr
A high-speed random number generator (RNG) circuit based on magnetoresistive random-access memory (MRAM) using an error-correcting code (ECC) post processing circuit is presented. Expand
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  • Open Access
Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system
We experimentally demonstrate a giant voltage-controlled magnetic anisotropy (VCMA) coefficient in a crystallographically strained CoFe layer (~15 monolayers in thickness) in a MgO/CoFe/Ir system. WeExpand
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Polymeric pseudo-crown ether for cation recognition via cation template-assisted cyclopolymerization.
Cyclopolymerization is a chain polymerization of bifunctional monomers via alternating processes of intramolecular cyclization and intermolecular addition, to give soluble linear polymers consistingExpand
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  • Open Access
Ethanol-Mediated Living Radical Homo- and Copolymerizations with Cp*-Ruthenium Catalysts: Active, Robust, and Universal for Functionalized Methacrylates
With judiciously selected ligands (phosphines) and cocatalysts (amines), a series of highly active and functionality-tolerant pentamethylcyclopentadienyl (Cp*) ruthenium catalysts [Cp*Ru(Cl)L1L2; L1Expand
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