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- H. Statz, P A Newman, I Smith, R. Pucel, H. H. Haus
- IEEE Transactions on Electron Devices
- 1987

We have developed a GaAs FET model suitable for SPICE Circuit simulations. The dc equations are accurate to about 1 percent of the maximum drain current. A simple but accurate interpolation formulaâ€¦ (More)

- I Smith, H. Statz, H. H. Haus, R. Pucel
- IEEE Transactions on Electron Devices
- 1987

It is shown that source and drain charges are not state variables in an FET, especially for source-drain voltages near zero. This behavior, observed in the model proposed in [2], is a genuineâ€¦ (More)

- H. Statz, R. Pucel, J Simpson, H. H. Haus
- IEEE Transactions on Electron Devices
- 1976

The noise and signal properties of Read-type avalanche diodes under large-signal levels are examined. In contrast to most other previous theories, we include the saturation current in the equationsâ€¦ (More)

- H. Statz, H. H. Haus, R. Pucel
- IEEE Transactions on Electron Devices
- 1978

In this paper we show that very large displacement currents may flow in high power Read diodes, especially when they are operated in the pulsed mode. These displacement currents may have peakâ€¦ (More)

- H. Statz, R. A. Pucel
- Proceedings of the IRE
- 1957

New devices are considered in which electrons or holes are injected directly into space-charge regions of reversebiased junctions avoiding the diffusion of carriers through field-free regions. Theâ€¦ (More)

- H. Schenkel, H. Statz
- Proceedings of the IRE
- 1956

This paper describes briefly charge-carrier multiplication, avalanche breakdown, and the effect of a greater than unity in junction transistors. The electrical characteristics in the Î±> 1 region andâ€¦ (More)

- M. G. Adlerstein, J.W. McClymonds, H. Statz
- IEEE Transactions on Electron Devices
- 1981

Microwave admittance measurements in a high power GaAs double-drift Read diode are fitted to an analytical solution to the Read equation. The data can be explained within experimental error by theâ€¦ (More)

- H. Statz, R.N. Wallace
- IEEE Transactions on Electron Devices
- 1979

We have tested many GaAs IMPATT diodes under high power pulsed conditions and found that the best power output and efficiency occur at higher frequencies in the pulsed mode than in the CW mode. Thisâ€¦ (More)

- H. Statz, E. A. Guillemin, R. A. Pucel
- Proceedings of the IRE
- 1954

The analytical solution of the diffusion equation has been used to construct an accurate equivalent circuit of the junction transistor. All network components are expressed in terms of the physicalâ€¦ (More)

- M. G. Adlerstein, H. Statz
- IEEE Transactions on Electron Devices
- 1979

A new IMPATT diode structure is proposed. The device incorporates a heterojunction between materials having different electric field saturated carrier velocities. Analysis shows that such a diode canâ€¦ (More)