• Publications
  • Influence
A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.
Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕Co20Fe60B20∕Ta pseudo-spin-valve magnetic tunnel junction annealed at 525°C. To obtain high TMR ratio,
Electric-field control of ferromagnetism
By applying electric fields, the ability to externally control the properties of magnetic materials would be highly desirable from fundamental and technological viewpoints is demonstrated, particularly in view of recent developments in magnetoelectronics and spintronics.
Current-induced torques in magnetic materials.
How currents can generate torques that affect the magnetic orientation and the reciprocal effect in a wide variety of magnetic materials and structures is explained.
Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
A mean-field model of ferromagnetism mediated by delocalized or weakly localized holes in zinc-blende and wurzite diluted magnetic semiconductors is presented. The model takes into account strong
2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read
A 1.8V 2Mb spin-transfer torque RAM chip using a 0.2mum logic process with an MgO tunneling barrier cell demonstrates the circuit technologies for potential low-power non-volatile RAM, or universal
Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO.
Current-induced effective magnetic fields can provide efficient ways of electrically manipulating the magnetization of ultrathin magnetic heterostructures. Two effects, known as the Rashba spin orbit
Semiconductor spintronics
We review recent progress made in the field of semiconductor spintronics, a branch of semiconductor electronics where both charge and spin degrees of freedom play an important role in realizing
20-nm magnetic domain wall motion memory with ultralow-power operation
We study the write and retention properties of magnetic domain wall (DW)-motion memory devices with the dimensions down to 20 nm. We find that the write current and time are scaled along with device
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
A new GaAs‐based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x‐ray diffraction and shown to increase