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- Publications
- Influence
Quantized conductance through individual rows of suspended gold atoms
- H. Ohnishi, Y. Kondo, K. Takayanagi
- Chemistry
- Nature
- 22 October 1998
As the scale of microelectronic engineering continues to shrink, interest has focused on the nature of electron transport through essentially one-dimensional nanometre-scale channels such as quantum… Expand
Suspended Gold Nanowires: Ballistic Transport of Electrons
- K. Takayanagi, Y. Kondo, H. Ohnishi
- Materials Science
- 2001
Gold nanowires a few atomic diameters wide are observed by ultra-high vacuum transmission electron microscopy, and their conductance measured simultaneously using a scanning tunneling microscope… Expand
- 24
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40-Gbit/s D-type flip-flop and multiplexer circuits using InP HEMT
- T. Suzuki, H. Kano, +4 authors Y. Watanabe
- Engineering
- IEEE Radio Frequency Integrated Circuits (RFIC…
- 20 May 2001
We developed a novel design technique for a D-type flip-flop (D- FF) circuit that is based on a small-signal-equivalent circuit approach. This technique provides the best condition to operate the… Expand
UHV electron microscope and simultaneous STM observation of gold stepped surfaces
- H. Ohnishi, Y. Kondo, K. Takayanagi
- Chemistry
- 9 October 1998
Abstract A miniaturized scanning tunneling microscope (STM) was put in a UHV electron microscope to simultaneously observe specimen surfaces in transmission electron microscope images and STM images.… Expand
Metallic Conductivity of Langmuir-Blodgett Films Based on Ditetradecyldimethylammonium-Au(dmit)2, where dmit is 1,3 dithiol-2-thione-4,5-dithiolate.
- Y. F. Miura, Y. Okuma, H. Ohnishi, Takumi Kawasaki, M. Sugi
- Physics
- 1 December 1998
Conductive Langmuir-Blodgett films of ditetradecyldimethylammonium-Au(dmit)2 (dmit=1,3 dithiol-2-thione-4,5-dithiolate) have been fabricated without the use of matrix molecules. The in-plane dc… Expand
Growth processes of Si(111)-√3×√3-Ag studied by scanning tunneling microscope
- H. Ohnishi, I. Katayama, Y. Ohba, F. Shoji, Kenjiro Oura
- Chemistry
- 30 June 1993
Domain growth processes of Si(111)√3×√3-R30 o -Ag surfaces and their dependence upon deposition conditions have been investigated by means of scanning tunneling microscope. When Ag is deposited at… Expand
Efficient D-C electroluminescence from ZnS:Mn and ZnS:TbF3 thin films prepared by RF sputtering
- H. Ohnishi, N. Sakuma, K. Ieyasu, Y. Hamakawa
- Chemistry
- 1 October 1983
Etude de l'electroluminescence de couches minces ZnS activees par TbF 3 et Mn, en fonction de la concentration en impuretes et en fonction de l'epaisseur de la couche
HCN laser scattering on the JIPP T-IIU tokamak
- K. Kawahta, T. Tetsuka, +4 authors T. Iwasaki
- Physics
- 1 July 1988
AbstractA 4-channel HCN laser scattering system has been developed and applied to the JIPP T-IIU tokamak. Main aim of this system is to study microturbulence excited in the plasma, especially in the… Expand
Formation of a Si(100)c(8×2) surface phase using H-induced self-organization and H extraction
- O. Kubo, T. Kobayashi, +5 authors Kenjiro Oura
- Materials Science
- 18 September 2001
A $\mathrm{Si}(100)c(8\ifmmode\times\else\texttimes\fi{}2)$ surface phase has been fabricated using atomic-hydrogen-induced self-organization followed by hydrogen extraction by the tip of scanning… Expand
Electroluminescent Display Materials
- H. Ohnishi
- Chemistry
- 1 August 1989
Luminescence is the emission of light, other than thermal incandescence, as a result of external stimulation of a material. A material that shows efficient luminescence is called a phosphor. Numerous… Expand