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Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor
We adapt the spin accumulation model of the perpendicular transport in metallic magnetic multilayers to the issue of spin injection from a ferromagnetic metal (F) into a semiconductor (N). We showExpand
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Spin pumping and inverse spin Hall effect in platinum: the essential role of spin-memory loss at metallic interfaces.
Through combined ferromagnetic resonance, spin pumping, and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of ℓsfPt=3.4±0.4  nm andExpand
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Spin-polarized current induced switching in Co/Cu/Co pillars
We present experiments of magnetization reversal by spin injection performed on pillar-shaped Co/Cu/Co trilayers. The pillars (200×600 nm2) are fabricated by electron beam lithography and reactiveExpand
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Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
Although the creation of spin polarization in various nonmagnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavilyExpand
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Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces.
The spin-orbit interaction couples the electrons' motion to their spin. As a result, a charge current running through a material with strong spin-orbit coupling generates a transverse spin currentExpand
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Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces.
Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interfaceExpand
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Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor.
We report on spin injection experiments at a Co/Al2O3/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop DeltaV at the interface asExpand
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Angular dependence of the tunnel magnetoresistance in transition-metal-based junctions
We have investigated the angular behavior of the tunnel magnetoresistance (TMR) in transition-metal-based junctions using the low-field susceptibility of the crossed magnetic configuration. TheExpand
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Electrical detection of spin accumulation in a p-type GaAs quantum well.
We report on experiments in which a spin-polarized current is injected from a GaMnAs ferromagnetic electrode into a GaAs layer through an AlAs barrier. The resulting spin polarization in GaAs isExpand
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Suppression of the critical thickness threshold for conductivity at the LaAlO3/SrTiO3 interface.
Perovskite materials engineered in epitaxial heterostructures have been intensely investigated during the last decade. The interface formed by an LaAlO3 thin film grown on top of a TiO2-terminatedExpand
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