Highly Influential Citations6
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The feedback-insensitive anthranilate synthase (ASA2) cDNA—isolated from a 5-methyltryptophan (5MT)-resistant tobacco cell line—driven by the CaMV 35S promoter or 606 bp of the native ASA2 promoter,… Continue Reading
A gate-first process was used to fabricate CMOS circuits with high performing high-K and metal gate transistors. Symmetric low VT values of plusmn 0.25 V and unstrained IDSAT of 1035/500 muA/mum for… Continue Reading
We discuss several advancements over our previous report (S. Kubicek, 2006): - Introduction of conventional stress boosters resulting in 16% and 11% for nMOS and pMOS respectively. For the first time… Continue Reading
We show for the first time that conduction and valence band-edge effective work functions (WF) are achieved simultaneously by one single Dy<sub>2</sub>O<sub>3</sub> capping layer on HfO<sub>2</sub>… Continue Reading
We are reporting for the first time on the use of simple resist-based selective high-k dielectric capping removal processes of La<sub>2</sub>O<sub>3</sub>, Dy<sub>2</sub>O<sub>3</sub> and… Continue Reading
In this study, HfSiON was applied as a top layer of HfO/sub 2/ to achieve higher mobility. The effects of nitrogen and its profile on MOSFET performance of high-k devices are investigated.
We have investigated Al<sub>2</sub>O<sub>3</sub>, Dy<sub>2</sub>O<sub>3</sub>, and La<sub>2</sub>O<sub>3</sub> as dielectric cap layers for use in low V<sub>t</sub> CMOS integration schemes. The cap… Continue Reading
HfSiO gate dielectric grown by atomic layer deposition (ALD) method were demonstrated to fabricate dynamic random access memory (DRAM) devices. Easy control of the ratio of Hf to Si in HfSiO films… Continue Reading