• Publications
  • Influence
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet. Expand
Present status of amorphous In–Ga–Zn–O thin-film transistors
TLDR
Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs. Expand
Iron-based layered superconductor La[O(1-x)F(x)]FeAs (x = 0.05-0.12) with T(c) = 26 K.
TLDR
It is reported that a layered iron-based compound LaOFeAs undergoes superconducting transition under doping with F- ions at the O2- site and exhibits a trapezoid shape dependence on the F- content. Expand
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TLDR
The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics. Expand
Material characteristics and applications of transparent amorphous oxide semiconductors
Transparent amorphous oxide semiconductors have unique electron transport properties, such as large electron mobility (10–50 cm2/Vs) and the absence of a Hall voltage sign anomaly, that are not seenExpand
P-type electrical conduction in transparent thin films of CuAlO2
Optically transparent oxides tend to be electrical insulators, by virtue of their large electronic bandgap (⩾3.1 eV). The most notable exceptions are doped versions of the oxides In2O3, SnO2 andExpand
Iron-based layered superconductor: LaOFeP.
TLDR
Magnetic and electrical resistivity measurements verify the occurrence of the superconducting transition at approximately 4 K in an iron-based layered oxy-pnictide LaOFeP. Expand
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
Abstract Recently we have reported the room temperature fabrication of transparent and flexible thin film transistors on a polyethylene terephthalate (PET) film substrate using an ionic amorphousExpand
Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*
TLDR
The origins of the prominent features of AOS devices from the viewpoint of materials science of A OS indicate that electron transport in oxide semiconductors are insensitive to random structures and these oxides do not form high-density defects that affect electron transport and TFT operation. Expand
...
1
2
3
4
5
...