H. Hosono

Publications1,667
h-index113
Citations69,893
Highly Influential Citations663
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet. Expand
Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05—0.12) with Tc = 26 K.
Present status of amorphous In–Ga–Zn–O thin-film transistors
TLDR
Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs. Expand
Iron-based layered superconductor La[O(1-x)F(x)]FeAs (x = 0.05-0.12) with T(c) = 26 K.
TLDR
It is reported that a layered iron-based compound LaOFeAs undergoes superconducting transition under doping with F- ions at the O2- site and exhibits a trapezoid shape dependence on the F- content. Expand
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TLDR
The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics. Expand
Material characteristics and applications of transparent amorphous oxide semiconductors
Transparent amorphous oxide semiconductors have unique electron transport properties, such as large electron mobility (10–50 cm2/Vs) and the absence of a Hall voltage sign anomaly, that are not seen… Expand
P-type electrical conduction in transparent thin films of CuAlO2
Optically transparent oxides tend to be electrical insulators, by virtue of their large electronic bandgap (⩾3.1 eV). The most notable exceptions are doped versions of the oxides In2O3, SnO2 and… Expand
Iron-based layered superconductor: LaOFeP.
TLDR
Magnetic and electrical resistivity measurements verify the occurrence of the superconducting transition at approximately 4 K in an iron-based layered oxy-pnictide LaOFeP. Expand
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
Abstract Recently we have reported the room temperature fabrication of transparent and flexible thin film transistors on a polyethylene terephthalate (PET) film substrate using an ionic amorphous… Expand
Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*
TLDR
The origins of the prominent features of AOS devices from the viewpoint of materials science of A OS indicate that electron transport in oxide semiconductors are insensitive to random structures and these oxides do not form high-density defects that affect electron transport and TFT operation. Expand
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