Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono
- Materials ScienceNature
- 25 November 2004
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05—0.12) with Tc = 26 K.
- Y. Kamihara, Takumi Watanabe, M. Hirano, H. Hosono
- Physics
- 17 June 2008
Present status of amorphous In–Ga–Zn–O thin-film transistors
Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
Iron-based layered superconductor La[O(1-x)F(x)]FeAs (x = 0.05-0.12) with T(c) = 26 K.
- Y. Kamihara, Takumi Watanabe, M. Hirano, H. Hosono
- Physics, Materials ScienceJournal of the American Chemical Society
- 23 February 2008
It is reported that a layered iron-based compound LaOFeAs undergoes superconducting transition under doping with F- ions at the O2- site and exhibits a trapezoid shape dependence on the F- content.
P-type electrical conduction in transparent thin films of CuAlO2
- H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, H. Hosono
- Materials ScienceNature
- 30 October 1997
Optically transparent oxides tend to be electrical insulators, by virtue of their large electronic bandgap (⩾3.1 eV). The most notable exceptions are doped versions of the oxides In2O3, SnO2 and…
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Material characteristics and applications of transparent amorphous oxide semiconductors
Transparent amorphous oxide semiconductors have unique electron transport properties, such as large electron mobility (10–50 cm2/Vs) and the absence of a Hall voltage sign anomaly, that are not seen…
Iron-based layered superconductor: LaOFeP.
- Y. Kamihara, H. Hiramatsu, H. Hosono
- Physics, Materials ScienceJournal of the American Chemical Society
- 15 July 2006
Magnetic and electrical resistivity measurements verify the occurrence of the superconducting transition at approximately 4 K in an iron-based layered oxy-pnictide LaOFeP.
Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*
The origins of the prominent features of AOS devices from the viewpoint of materials science of A OS indicate that electron transport in oxide semiconductors are insensitive to random structures and these oxides do not form high-density defects that affect electron transport and TFT operation.
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