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Electrical and structural properties of BaCe0.90Y0.10O3−δ thin film on MgO (100) substrate
- H. Hosono, T. Higuchi, T. Hattori
- Materials Science
- 1 December 2008
Y-doped BaCeO3 (BaCe0.90Y0.10O3−δ) thin films have been deposited on (100) MgO substrates by pulsed laser deposition. The BaCe0.90Y0.10O3−δ thin film prepared at substrate temperature of 600 °C and…
Electrical Properties and Structure of p‐Type Amorphous Oxide Semiconductor xZnO·Rh2O3
- T. Kamiya, S. Narushima, H. Hosono
- Materials Science
- 1 June 2005
p‐Type conduction in amorphous oxide was firstly found in zinc rhodium oxide (ZnO·Rh2O3) (Adv. Mater. 2003, 15, 1409), and it is still the only p‐type amorphous oxide to date. It was reported that an…
Single‐Crystalline Films of the Homologous Series InGaO3(ZnO)m Grown by Reactive Solid‐Phase Epitaxy
Single‐crystalline thin films of the homologous series InGaO3(ZnO)m (where m is an integer) are fabricated by the reactive solid‐phase epitaxy (R‐SPE) method. Specifically, the role of ZnO as…
Anomalous diamagnetism of electride electrons in transition metal silicides
- M. Hiraishi, K. Kojima, H. Hosono
- Physics
- 2 June 2021
M. Hiraishi,1 K. M. Kojima,1, 2 H. Okabe,1 A. Koda,1, 2 R. Kadono,1, 2 J. Wu,3 Y. Lu,3 and H. Hosono3 1Muon Science Laboratory and Condensed Matter Research Center, Institute of Materials Structure…
Electronic structure and properties of oxide glasses (I) π-Electron distribution on alkali borate glass networks
- H. Kawazoe, H. Hosono, T. Kanazawa
- Materials Science, Chemistry
- 1 August 1978
Ambipolar Property of Isolated Hydrogen in Oxide Materials Revealed by Muon
- M. Hiraishi, H. Okabe, A. Koda, R. Kadono, H. Hosono
- Physics
- 18 October 2021
The study on the electronic state of muon as pseudo-hydrogen (represented by the elemental symbol Mu) by muon spin rotation has long been appreciated as one of the few methods to experimentally…
Dielectric and Piezoelectric Properties of Lead Indium Niobate-Lead Titanate Single Crystal with High Curie Temperature Near Morphotropic Phase Boundary
- N. Yasuda, H. Ohwa, Y. Ishibashi
- Materials Science
- 1 January 2002
For lead indium niobate lead titanate(PIN-PT) binary system near the morphotropic phase boundary(MPB) composition with a high Curie Temperature Tc>250 °C, the temperature (30-380 °C), compositions…