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Comparison of resist collapse properties for deep ultraviolet and 193 nm resist platforms
A comparison of collapse behavior was made for photoresist features with linewidths from 80 to 200 nm, spacing from 100 to 350 nm, and aspect ratios from 2 to 6 for four different resist platforms:Expand
Sources of line-width roughness for EUV resists
Resists for the next generation of lithography must be able to meet stringent line width roughness (LWR) targets. The LWR requirements, governed by device performance, are the same regardless of theExpand
A two-dimensional model of the deformation of photoresist structures using elastoplastic polymer properties
A model was developed for predicting the collapse behavior of photoresist structures due to the drying of rinse liquids during wet chemical processing. The magnitude of the capillary forces wasExpand
Acid distribution in chemically amplified extreme ultraviolet resist
Acid generators are sensitized by secondary electrons in chemically amplified resists for ionizing radiation. As acid generators react with low-energy electrons (as low as thermal energy), thisExpand
Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography
Extreme ultra violet (EUV) lithography is one of the most promising next generation lithographic techniques for the production of sub-50 nm feature sizes with applications in the semiconductorExpand
Diazonaphthoquinone Molecular Glass Photoresists: Patterning without Chemical Amplification
Molecular glass photoresists have attracted increasing attention as next-generation replacements for traditional polymeric resists. Most of those reported so far have been based on a contrastExpand
Techniques for directly measuring the absorbance of photoresists at EUV wavelengths
Absorbance is a key characteristic of photoresists that can limit resolution, wall angle, and practical resist film thicknesses. Currently, however, there is limited data for absorbance of resists atExpand
Characterization of outgassing for EUV technology
Outgassing of photoresists needs to be minimized to avoid contamination of optics. A new challenge for EUV photoresists - that was not encountered for previous lithography technologies - is thatExpand
Study of the Structure−Properties Relationship of Phenolic Molecular Glass Resists for Next Generation Photolithography
In this paper, we report the synthesis and characterization of a family of phenolic molecular glasses with variable size and branch architecture. This research is aimed at providing an improvedExpand
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