H. C. Kirsch

Publications
Influence

Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology

C. Lu, J. Sung, H. C. Kirsch, S.J. Hillenius, T. Smith, L. Manchanda
Materials Science
IEEE Electron Device Letters
1 May 1989

The C-V characteristics of arsenic-doped polysilicon show a gate-bias dependence of the inversion capacitance and a reduction in the expected value of the inversion capacitance. The characteristics… Expand

Polysilicon encapsulated local oxidation

S. Roth, W. Ray, C. Mazure, H. C. Kirsch
Materials Science
IEEE Electron Device Letters
1 March 1991

Polysilicon encapsulated local oxidation (PELOX) is proposed as an effective isolation technique that satisfied advanced device requirements without any difficult-to-control structures or processes.… Expand

A high-performance quadruple well, quadruple poly BiCMOS process for fast 16 Mb SRAMs

J. Hayden, M. Woo, +12 authors H. C. Kirsch
Materials Science
International Technical Digest on Electron…
1992

An advanced, high-performance BiCMOS technology has been developed for fast 16Mb SRAMs. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts,… Expand

Technology for the fabrication of A 1 MB CMOS DRAM

D. S. Yaney, J.C. Desko, +6 authors H. C. Kirsch
Materials Science
International Electron Devices Meeting
1985

We describe the cell structure and fabrication methods employed for a practical 1 MB CMOS DRAM. This process combines concentrated efforts in the cell array with a core technology of 1.25 uM Twin-Tub… Expand

Recessed polysilicon encapsulated local oxidation

K.J. Cooper, S. Roth, W. Ray, H. C. Kirsch, J. Ko
Materials Science
IEEE Electron Device Letters
1 October 1991

Local oxidation of silicon (LOCOS) is the most commonly used isolation technology in silicon integrated circuits. The inherently large field oxide encroachment associated with LOCOS severely limits… Expand

A high-performance low-complexity bipolar technology using selective collector compensation

R. C. Taft, J. Hayden, D. Denning, H. C. Kirsch
Engineering
International Technical Digest on Electron…
1992

This paper describes a novel bipolar technology which achieves very high ECL performance while maintaining low process complexity, large fabrication tolerances, and full CMOS compatibility. The high… Expand

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