Learn More
We present results on enhancement of 460 nm blue and 340 nm UV optical power output in III-nitride light emitting diodes ͑LEDs͒ using photonic crystals ͑PCs͒ under current injection. Triangular arrays of the PCs with diameter/periodicity of 300/700 nm were patterned using electron-beam lithography and inductively coupled plasma dry etching. The total power(More)
We report on the fabrication of 280-nm AlGaN-based deep-ultraviolet light-emitting diodes ͑UV LEDs͒ on sapphire substrates with an integrated microlens array. Microlenses with a diameter of 12 ␮m were fabricated on the sapphire substrate by resist thermal reflow and plasma dry etching. LED devices were flip-chip bonded on high thermal conductive AlN ceramic(More)
Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy Appl. High temperature thermoelectric properties of optimized InGaN A comparison of the growth modes of (100)-and (110)-oriented CrO2 films through the calculation of surface and interface energies A strain relief mode at interface of GaSb/GaAs grown by(More)
The authors report on the excitation dynamics of the photoluminescence ͑PL͒ emission of Er doped GaN thin films synthesized by metal organic chemical vapor deposition. Using the frequency tripled output from a Ti:sapphire laser, the authors obtained PL spectra covering the ultraviolet ͑UV͒ to the infrared regions. In the UV, a dominant band edge emission at(More)
Current-injected 1.54 ␮m emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 ␮m emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the(More)
We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Füchtbauer–Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived(More)
We report on the fabrication and photovoltaic characteristics of InGaN solar cells by exploiting InGaN/GaN multiple quantum wells ͑MQWs͒ with In contents exceeding 0.3, attempting to alleviate to a certain degree the phase separation issue and demonstrate solar cell operation at wavelengths longer than previous attainments ͑Ͼ420 nm͒. The fabricated solar(More)