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We have used the Mori–Tanaka method to study the effect of nonlinear interface debonding on the constitutive behavior of composite material with high particle volume fraction. The interface debonding is characterized by a nonlinear cohesive law determined from the fracture test of the high explosive PBX 9501. Using the example of the composite material with(More)
The effect of damage due to particle debonding on the constitutive response of highly filled composites is investigated using two multiscale homogenization schemes: one based on a closed-form micromechanics solution, and the other on the finite element implementation of the mathematical theory of homogenization. In both cases, the particle debonding process(More)
The nonlinear cohesive law derived from the weak van der Waals force for carbon nanotube/polymer interfaces is incorporated in present study of CNT-reinforced composites. Carbon nanotubes can indeed improve the mechanical behavior of composite at the small strain, but such improvement disappears at relatively large strain because the completely debonded(More)
NiSi has replaced CoSi<sub>2</sub> as the salicide material for 65 nm technology and beyond mainly due to its low salicide resistance for the narrow line width structures. However, it may bring along unwanted salicidation, resulting in failed transistors. This paper highlights how unwanted salicidation, also known as Ni piping, is successfully identified by(More)
Selection of optimized electron beam parameters for in-line monitoring is necessary to eliminate false signals. Application of electron beam to detect electrical defects, particularly leakages, for static random access memory (SRAM) cells poses a great challenge as it requires current measurement tool with nanometer resolution to complement it. By(More)
Nanoprobing plays a crucial role for failure analysis (FA) in the nanometer-region generation nodes by having the capability to detect the failure sites and characterize the electrical behaviour of malfunctional devices for better understanding of the failure mechanisms. It also offers a guide to the necessary physical analysis in identifying the cause of(More)
Ni diffusion in sub-100 nm devices can adversely affect electrical performance, and contribute greatly to yield loss. Despite the tremendous advantages of Ni salicide technology over Ti or Co, there are problems associated with the intrinsic properties of NiSi. Ni spiking into Si substrate or conductive bridges between silicide on the gate electrodes and(More)