H. Tameoka

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
Most of high performance III-V compound semiconductor devices are fabricated utilizing heterostructures. However, when the heterostructures are grown by OMVPE, a compositional grading arises at a hetero-interfaces. The compositional grading may deteriorate the performance of the compound semiconductor devices. We have investigated the degree of the(More)
Compositional grading at hetero-interfaces in InP/GaInAs/InP structures grown by OMVPE at 590, 620, and 650degC with different growth interruption times in TBAs atmosphere were investigated utilizing X-ray crystal truncation rod scattering method. From the analysis of the X-ray CTR scattering spectra, it was shown that the lifetime of As on GaInAs surface(More)
  • 1