Two different unmodified mdustnal CMOS processes have been used for the mtegratlon of h&y mte-rdtgttated pn structures Under forward bias these pn Junctions emlt narrow-band mfrared bght at 1160 nm Hrlth an electncal-to-opt& power conversion e.tkency of typically 10e4 The same Junctions show broad-band vlslble-hght ermsslon between 450 and 800 nm m the… (More)
For the first time a packaged single-chip anemometry microsystem is reported. The system includes a thermal CMOS flow sensor with on-chip power management, signal conditioning, and A/D conversion. It is fabricated using an industrial IC process followed by post-CMOS micromachin-ing. The system is packaged on a flexible substrate using flip-chip… (More)
We present a chemical gas sensor based on a resonating cantilever beam in CMOS MEMS technology. The sensor is actu-ated employing electrothermal actuation. Thus, for a 300 µ m long beam vibration amplitudes of 6.5 nm per mW heating power are achieved. The vibrations are detected with piezoresistors in a Wheatstone bridge scheme. Detection sensitivities… (More)
The numerical analysis of carrier transport in magnetic-field-sensitive integrated bipolar transistors is presented. The resulting distributions of potential and current density were obtained for a lateral CMOS NPN dual-collector magne totransistor, in the presence of a magnetic field perpendicular to the device surface.