H. Niemiec

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This paper concerns the development of a novel monolithic active pixel radiation sensor based on SOI technology. In this device, the sensitive volume corresponds to a high resistivity SOI "handle" wafer and the front-end CMOS electronics is integrated in the SOI device layer. Pixel test matrices have been manufactured and are under extensive(More)
Monolithic active pixel detectors fabricated in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. The fully depleted sensing diode has been manufactured under buried oxide (BOX) while read-out circuitry occupies upper silicon layer(More)
This paper addresses the development of a novel monolithic active pixel image sensor based on SOI technology. The test active pixel matrices have been recently manufactured and are under extensive examination. The paper describes an idea of the device and shows the most recent test results.
The paper presents the concept and the verification of a novel silicon monolithic active pixel detector realized in the SOI technology. The reliability and the basic electrical characteristics of the sensor are studied and the sensor sensitivity to the ionising radiation is investigated in details. 2004 Elsevier Ltd. All rights reserved.
This paper shows the comparison between the simulative evaluation and laboratory measurements of Noise Figure in Remote Keyless Entry (RKE) System working in two variants - 315MHz and 433MHz. The key point is that simulation was made in SPICE-like simulator using the PCB extraction data and models that do not use the telegraphists' equations. The difference(More)
Silicon detectors, and especially silicon pixel detectors, have found wide range of applications, not only in particle physics but also in medicine, space science and many other disciplines. Their attractive features, like good spatial and energy resolution, are motivation for the continuous works on new structural solutions and fabrication processes of(More)
Monolithic active pixel detectors fabricated in SOI (silicon on insulator) technology are novel sensors of ionizing radiation which exploit SOI substrates for the integration of readout electronics with a pixel detector. The fully-depleted sensing diode is manufactured under the SOI buried oxide (BOX) in the volume of the `handle wafer', while readout(More)
Real time dosimetry is a critical issue in most radiotherapy applications. SUCIMA (Silicon Ultra fast Cameras for electron and gamma sources In Medical Applications) is a project addressing the development of an imaging technique of extended radioactive sources based on monolithic and hybrid position sensitive silicon sensors, where "imaging" has to be(More)
Monolithic active pixel detectors in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. Some important parameters of the devices are breakdown voltage and leakage current. The paper addresses recent developments in the field of the(More)
An active pixel detector, which exploits wafer-bonded silicon on insulator (SOI) substrates for integration of the readout electronics with the pixel detector, is presented. The main concepts of the proposed monolithic sensor and the preliminary tests results with ionising radiation sources are addressed. Silicon on insulator is an alternative solution for(More)