H. Mariette

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The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using x-ray emission spectroscopy , the Al 3p , Al 3s and N 2p spectral densities are obtained. The corresponding local and partial theoretical densities of states (DOS) , as well as the total DOS and the band structure , are calculated by(More)
We report on the successful growth of strained core-shell GaAs/InGaAs nanowires on Si (111) substrates by molecular beam epitaxy. The as-grown nanowires have a density in the order of 10(8) cm(-2), length between 3 and 3.5 μm, and diameter between 60 and 160 nm, depending on the shell growth duration. By applying a range of characterization techniques, we(More)
Light amplification by stimulated emission of radiation, well-known for revolutionising photonic science, has been realised primarily in fermionic systems including widely applied diode lasers. The prerequisite for fermionic lasing is the inversion of electronic population, which governs the lasing threshold. More recently, bosonic lasers have also been(More)
Acknowledgement This manuscript is an outcome of my research within the group of " Nanostructures and Semiconductor " at Institute for Nanoscience and Cryogenics at CEA-Grenoble, France. For three years I had a chance to meet and to work with researchers who have a passion to science, hence it is a pleasure for me to express my most profound appreciation to(More)
Mis en page avec la classe thloria. Acknowledgments I would like to express my gratitude to my supervisors in Poland : Piotr Kossacki and Jan Gaj, and to my supervisors in France : David Ferrand and Joël Cibert. Their interactions and collaboration made my study pleasant and fruitful. I am grateful for their understanding, patience, continuous support, and(More)
We perform accurate tight binding simulations to design type-II short-period CdSe/ZnTe superlattices suited for photovoltaic applications. Absorption calculations demonstrate a very good agreement with optical results with threshold strongly depending on the chemical species near interfaces.
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