H. M. H. Chong

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—In this work, we demonstrate a wafer-level zinc oxide (ZnO) nanowire fabrication process using ion beam etching and a spacer etch technique. The proposed process can accurately define nanowires without an advanced photolithography and provide a high yield over a 6-inch wafer. The fabricated nanowires are 36 nm wide and 86 nm thick and present excellent(More)
We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH(-1) is(More)
Localized laser heating of amorphous Si deposited on LiNbO 3 results in crystallization of the Si over-layer and the formation of a waveguide in the LiNbO 3 substrate that supports guided modes in the visible and IR. 1. Introduction Silicon is well known to be an exceptional electronic material, though more recently it has found interest by several research(More)
— Top-down ZnO nanowire FETs have been fabricated using mature photolithography, ZnO atomic layer deposition (ALD) and plasma etching. This paper investigates the effects of oxygen adsorption by measuring FET characteristics at different gate bias sweep rates and by characterizing hysteresis effects. Unpassivated devices exhibit a low threshold voltage(More)
  • Murray W Mccutcheon, Marko Lončar, T R E Miller, K M Northrup, A Birnbaum, A D Boca +160 others
  • 2008
A photonic crystal nanocavity with a Quality (Q) factor of 1.4 × 10 6 , a mode volume of 0.78(λ /n) 3 , and an operating wavelength of 637 nm is designed in a silicon nitride (SiN x) ridge waveguide with refractive index of 2.0. The effect on the cavity Q factor and mode volume of single diamond nanocrystals of various sizes and locations embedded in the(More)
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