H. Kataniwa

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An a-Si:H contact linear image sensor for facsimile equipment with high S/N performance has been developed. The keys to the improvement are: (a) The photosensing element has a new structure with Si<inf>3</inf>N<inf>4</inf>and p-a-Si:H blocking layers on both sides of photosensitive a-Si:H layer. These blocking layers markedly suppress the dark current while(More)
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