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Recently the importance of cosmic ray neutron-induced soft errors has been recognized. We propose a simple model to estimate the neutron-induced soft error rates (SER's), which is a modified version of the burst generation rate (BGR) model. Our model can be used to easily and quickly estimate neutron-induced soft error rates and provides a useful guideline(More)
To accurately consider 2D dopant profile effect, we have studied transport modeling by comparing nMOSFETs with indium or boron pocket implant. Our inverse modeling has successfully extracted their features of dopant profiles and DIBL effects. It has enabled us to evaluate that the generalized hydrodynamic model is highly reliable even in smaller MOSFETs(More)
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