H. Horta

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Xenon capillary discharge sources are being developed for extreme ultraviolet (EUV) light for next generation lithography. However, the current sources generate in-band (2%), 2pi EUV emission with conversion efficiency (CE) of <1%. Here we report progress in the development of a Z-pinch EUV source using a tin target, which was found to have significant(More)
Extreme ultraviolet (EUV) radiation with wavelengths of 11-14 nm is seen as the most promising candidate for a new lithographic technology. Compared with synchrotron radiation sources and laser-produced plasmas, gas discharge-produced plasma sources for EUV radiation are expected to offer lower cost of ownership. Using xenon, a broadband emission in the(More)
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