H. Garcial

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Zirconium oxide based metal-insulator-semiconductor (MIS) capacitors with highly doped Si substrates have been studied by electrical characterization. ZrO<inf>2</inf> thin films were grown by atomic laer epostion (ALD), using ZrCp(NMe<inf>2</inf>)<inf>3</inf> as precursor (with Cp=C<inf>5</inf>H<inf>5</inf> and Me=CH<inf>3</inf>). The electrical(More)
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