Learn More
1.3 mum quantum dot (QD) lasers grown on GaAs substrates have recently shown promising performances. For the 1.55 mum wavelength range, QD structures grown on InP substrates have been proposed to produce lasers for long haul telecom. At this wavelength, the progress has been delayed by the difficulties to obtain high density of small QDs by molecular beam(More)
Single junction III-V heterostructures based devices could overtake the Shockley-Queisser limit if thermalisation of photogenerated carriers can be strongly limited as in the hot carrier solar cell concept [1]. Previous modelling [2] and experiments [3] have shown the interest of Multiple Quantum Wells heterostructures in the antimonide system and the(More)
InAs quantum dot lasers grown on (311)B InP substrates with AlGalnAs barriers have been fabricated and studied. A large decrease of the threshold current with temperature was observed from 110 to 140 K. In the same temperature range, electroluminescence spectra showed a shape change, an energy shift with temperature, which can not be fitted with a Varshni(More)
The role of Sb atoms present on the growth front during capping of InAs/InP (113)B quantum dots (QDs) is investigated by cross-sectional scanning tunnelling microscopy, atomic force microscopy, and photoluminescence spectroscopy. Direct capping of InAs QDs by InP results in partial disassembly of InAs QDs due to the As/P exchange occurring at the surface.(More)
The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (113)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through AFM and X-Ray diffraction structural analysis. The thermal conductivity (2.7W/mK at 300K) measured by the 3Z(More)
An atomic scale study has been performed to understand the influence of the (As,Sb) shutter sequences during interface formation on the optical properties of InGaAs/AlAsSb quantum wells. Our cross-sectional scanning tunneling microscopy results show that the onset of the Sb profile is steep in the Sb-containing layers whereas an appreciable segregation of(More)
  • 1