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1.3 mum quantum dot (QD) lasers grown on GaAs substrates have recently shown promising performances. For the 1.55 mum wavelength range, QD structures grown on InP substrates have been proposed to produce lasers for long haul telecom. At this wavelength, the progress has been delayed by the difficulties to obtain high density of small QDs by molecular beam(More)
InAs quantum dot lasers grown on (311)B InP substrates with AlGalnAs barriers have been fabricated and studied. A large decrease of the threshold current with temperature was observed from 110 to 140 K. In the same temperature range, electroluminescence spectra showed a shape change, an energy shift with temperature, which can not be fitted with a Varshni(More)
The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (113)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through AFM and X-Ray diffraction structural analysis. The thermal conductivity (2.7W/mK at 300K) measured by the 3Z(More)
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