H. Carrère

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The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier(More)
The aim of this study was to maximise methane production from waste activated sludge (WAS) originating from extended aeration process and presenting a low methane potential (190 mL CH 4 .g-1 OM). WAS co-digestion with fatty residues (FR, 560 mL CH 4 .g-1 OM) produced during pretreatments of the effluents from wastewater treatment plants in the Lille area(More)
We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and(More)
We report on the Mg-doped, indium-rich GaxIn1-xN (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of temperatures of 30 <T < 300 K. In the Mg-doped material however, where the conductivity is reduced, there is a strong PC spectrum with two(More)
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