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The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier(More)
The aim of this study was to maximise methane production from waste activated sludge (WAS) originating from extended aeration process and presenting a low methane potential (190 mL CH 4 .g-1 OM). WAS co-digestion with fatty residues (FR, 560 mL CH 4 .g-1 OM) produced during pretreatments of the effluents from wastewater treatment plants in the Lille area(More)
We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and(More)
A wideband steady-state model of a MQW-SOA is described. Least-squares fitting of the model to experimental polarization resolved amplified spontaneous spectra were used to obtain difficult to measure model parameters such as the intraband broadening energy, Auger recombination coefficient and the bandgap shrinkage coefficient. Simulations and comparisons(More)
We report on the Mg-doped, indium-rich GaxIn1-xN (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of temperatures of 30 <T < 300 K. In the Mg-doped material however, where the conductivity is reduced, there is a strong PC spectrum with two(More)
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