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The authors study defects in AlGaN/GaN heterostructures using DLTS. The AlGaN/GaN heterostructures used were grown by RF-plasma assisted molecular beam epitaxy (PA-MBE) on sapphire substrates. The Al mole fraction was kept at 0.2 for all the AlGaN layers. Two electron traps were detected. The trap levels are E/sub c/-0.15eV and E/sub c/-0.25eV,(More)
The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga<sub>0.995</sub>Mn<sub>0.005</sub>)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga<sub>0.995</sub>Mn<sub>0.005</sub>)N(More)
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