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We investigate the effectiveness of optical frequency dithering to enhance the reflection tolerance of RSOA-based WDM PONs. We show that the reflection-induced penalty can be substantially reduced in both directions by the same dithering frequency.
The authors study defects in AlGaN/GaN heterostructures using DLTS. The AlGaN/GaN heterostructures used were grown by RF-plasma assisted molecular beam epitaxy (PA-MBE) on sapphire substrates. The Al mole fraction was kept at 0.2 for all the AlGaN layers. Two electron traps were detected. The trap levels are E/sub c/-0.15eV and E/sub c/-0.25eV,… (More)
The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga<sub>0.995</sub>Mn<sub>0.005</sub>)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga<sub>0.995</sub>Mn<sub>0.005</sub>)N… (More)