Guru Subramanyam

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This paper presents a SPICE model for memristive devices. It builds on existing models and is correlated against several published device characterization data with an average error of 6.04%. When compared to existing alternatives, the proposed model can more accurately simulate a wide range of published memristors. The model is also tested in large(More)
This paper presents a memristor SPICE model that is able to reproduce current-voltage relationships of previously published memristor devices. This SPICE model shows a stronger correlation to various published device data when compared to existing SPICE models. Furthermore, switching characteristics of published memristor devices with switching times in the(More)
A memristor based write circuit is presented that can update multiple memristors using a neuron spike generated by the Izhikevich model. A memristor read circuit is also presented that is capable of quantizing the resistance into 5 discrete values that could be digitally decoded. Together, these circuits provide the basic block for a memristor based(More)
The recently discovered memristor has the potential to be the building block of a high-density memory system. A memristor based crossbar memory system was analyzed in terms of timing and switching energy using SPICE. The memristor model in the simulations was designed to match the I–V characteristics of three different published devices. The(More)
There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at(More)
As semiconductor devices have shrunk further into the nanoscale regime, a new device, the memristor, has been discovered that has the potential to transform neuromorphic computing systems. This device is considered as the fourth fundamental circuit element. It was first theorized by Dr. Leon Chua in 1971 and has been discovered by HP labs in 2008. This(More)
Ferroelectric BaTiO3/SrTiO3 with optimized c-axis-oriented multilayered thin films were epitaxially fabricated on (001) MgO substrates. The microstructural studies indicate that the in-plane interface relationships between the films as well as the substrate are determined to be (001)SrTiO3//(001)BaTiO3//(001)MgO and [100]SrTiO3//[100]BaTiO3//[100]MgO. The(More)
This paper describes a capacitive shunt switch, based on ferroelectric varactors as a potential replacement for RF MEMS switches for microwave applications. Our implementation is based on a coplanar waveguide (CPW) transmission line shunted by a ferroelectric varactor. The novelty in the implementation comes from the elimination of any moving parts (as in(More)
There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at(More)