Guoqiang Li

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Advanced materials for electrocatalytic water splitting are central to renewable energy research. In this work, three-dimensional (3D) hierarchical frameworks based on the self-assembly of MoS2 nanosheets on graphene oxide were produced via a simple one-step hydrothermal process. The structures of the resulting 3D frameworks were characterized by using a(More)
Advanced materials for electrocatalytic water splitting are central to renewable energy research. In this study, MoO 2 nanobelts@nitrogen self-doped MoS 2 nanosheets are produced by nitridation and sulfuration treatments of MoO 3 nanobelts. The material structures are characterized by a variety of techniques including scanning electron microscopy,(More)
bc The development of electrodes composed of non-noble-metal catalysts with both excellent activity and high stability for the hydrogen evolution reaction (HER) is essential for hydrogen production. In this work, a flexible and robust film electrode based on cobalt nanoparticles embedded into the interlamination of N-doped graphene film (Co@NGF) is(More)
Advanced materials for electrocatalytic water splitting are central to renewable energy research. In this study, we describe a two-step reaction for preparing hydrogen evolution reaction (HER) electrodes composed of Pt nanoparticles and MoS 2 nanosheets grown on carbon fibers. The morphology and the structures are characterized by a variety of techniques(More)
High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and(More)
Highly-efficient GaN-based light-emitting diode (LED) wafers have been grown on La 0.3 Sr 1.7 AlTaO6 (LSAT) substrates by radio-frequency molecular beam epitaxy (RF-MBE) with optimized growth conditions. The structural properties, surface morphologies, and optoelectronic properties of as-prepared GaN-based LED wafers on LSAT substrates have been(More)