Guo-Ping Ru

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We compare TEC measurements from the NASA Radar Altimeter and DORIS instrument on board TOPEX/POSEIDON with GPS TEC estimates , and evaluate diierent GPS data analysis strategies. We verify that global tomographic GPS analysis using a voxel grid is well suited for ionospheric calibration of altimeters. We show that a 1-day t of 20-second-averaged NRA(More)
The polycrystalline ruthenium films were grown on TaN substrates by atomic layer deposition at temperatures ranging from 300 degC to 330 degC using bis(cyclopentadienyl) ruthenium [RuCp<sub>2</sub>] and oxygen as precursors. Pretreatment of reactive ion etching (RIE) was performed to the underlying substrates before deposition in order to improve the(More)
VN thin film was studied as diffusion barrier between copper and Si. The VN film was prepared by reactive ion beam sputtering. X-ray diffraction (XRD), Auger electron spectroscopy (AES) and scanning electron microscopy (SEM) were applied to characterize the thin film properties. The as-deposited VN is amorphous and can be thermal stable up to 800/spl deg/C(More)
Ni silicide and germanosilicide formation with one-step and two-step rapid thermal annealing are compared in this study. The 1st annealing temperature for NiSi and Ni(Si/sub 1-x/Ge/sub x/) in two-step annealing process are investigated with sheet resistance measurements, X-ray diffraction and Auger election spectroscopy. Cross-sectional SEM shows the(More)
As the critical dimension goes down to sub micron range, salicide (self-aligned-silicide) technology has become a crucial step in the fabrication process of ultra-high-speed CMOS devices. Among salicides processes, nickel salicide is recently becoming an appealing candidate to replace the traditionally used TiSi/sub x/ and CoSi/sub x/ in aggressively scaled(More)
Well-aligned ZnO nanorods were grown on the p-GaN substrate by a hydrothermal method and n-ZnO nanorods/p-GaN heterojunction LED structures were formed. The electroluminescence (EL) properties of this structure were studied under both forward and reverse bias. The nanorod LED device only has light output under reverse bias. The I&#x2013;V characteristic(More)
The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k=2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical(More)