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We report on a 2D simulation study of a couple of mid-infrared quantum cascade lasers based on the integration of a number of optoelectronic models. Quantum mechanical computation was performed to find the quantization states and a rate equation approach was used to compute the optical gain. Temperature and field dependence effects are taken into account in(More)
Well-aligned ZnO nanorods were grown on the p-GaN substrate by a hydrothermal method and n-ZnO nanorods/p-GaN heterojunction LED structures were formed. The electroluminescence (EL) properties of this structure were studied under both forward and reverse bias. The nanorod LED device only has light output under reverse bias. The I–V characteristic(More)
In this work, the metal gate effective work function (EWF) modulation for the TiN/Ta/TiN/SiO<inf>2</inf>/p-Si(100) structure was investigated. Comparing with TiN/SiO<inf>2</inf>/p-Si(100) structure, after annealing the introduction of Ta can effectively reduce the flat band voltage. It is also revealed that although as the thermal budget increases the flat(More)
The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k=2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical(More)
We propose a new structure of Schottky rectifier, named trapezoid mesa trench MOS barrier Schottky rectifier (TM-TMBS). By 2D numerical simulations, both forward and especially better reverse I&#x2013;V characteristics, including higher breakdown voltage and lower leakage current, were demonstrated and explained comparing to regular TMBS as well as(More)
The electrical properties of Ni (Pt)-silicide/Si contact is studied and it is revealed that the Schottky barrier contact obeys a complicated two Gauss distribution. It is demonstrated that the Pt interface layer can not only improve NiSi phase thermal stability but also improve contact homogeneity
The polycrystalline ruthenium films were grown on TaN substrates by atomic layer deposition at temperatures ranging from 300 degC to 330 degC using bis(cyclopentadienyl) ruthenium [RuCp<sub>2</sub>] and oxygen as precursors. Pretreatment of reactive ion etching (RIE) was performed to the underlying substrates before deposition in order to improve the(More)
VN thin film was studied as diffusion barrier between copper and Si. The VN film was prepared by reactive ion beam sputtering. X-ray diffraction (XRD), Auger electron spectroscopy (AES) and scanning electron microscopy (SEM) were applied to characterize the thin film properties. The as-deposited VN is amorphous and can be thermal stable up to 800/spl deg/C(More)