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The use of double-metallic Au / Ag layers coupled to InGaN quantum well (QW) results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride light-emitting diodes.
Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD… (More)
Articles you may be interested in Temporally and spatially resolved photoluminescence investigation of (11 2 ¯ 2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates Appl. Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents Optical properties of… (More)
Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.
The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal-quantum-efficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed.
We have observed peculiar behaviors on the dependence of photoluminescence emission peak on excitation fluence in InGaN/GaN multiple quantum wells.
Selective area growths of highly-uniform InGaN quantum dots (QDs) on dielectric nanopatterns defined by self-assembled diblock copolymer were demonstrated with ultra-high QDs density of 8×1010cm<sup>−2</sup>, which represents the highest QDs density reported for nitride-based QDs.
We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
The growths of InGaN quantum wells light-emitting diodes with AlInN thin barrier were performed by metal-organic chemical vapor deposition, and this approach led to reduction in thermionic carrier escape and efficiency droop.
We have generated broadband THz pulses within eight periods of InGaN/GaN quantum wells due to dipole radiation following generation of spatially-separated electrons and holes. Output powers as high as 1 μW have been obtained.