We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed… (More)
We design Si3N4 tri-layer vertical Y-junction with arbitrary splitting ratio and low reflection, fabricate bi-layer asymmetric vertical coupler, and demonstrate tri-layer vertical Y-junction with splitting ratio of 1:1 and 3:2 for multilayer photonic integrated circuits.
We design, fabricate, and demonstrate ultra-low loss Si 3 N 4 vertical couplers for multilayer photonic integrated circuits. We achieve 0.05 dB coupling loss, 100×2 µm 2 footprint, and vertical coupling tolerant to lateral misalignment up to 1.2 µm. 1. Introduction Recent advances in photonic integrated circuits (PIC)  are accelerating positive prospects… (More)