Guangshan Duan

Learn More
The negative bias temperature instability (NBTI) in CMOS devices is one of most prominent sources of aging mechanisms, which can induce severe threats to the reliability of modern processors at deep submicron semiconductor technologies. Due to the unbalanced duty cycle ratio of the SRAM cells, the data cache suffers a heavy NBTI stress and this will further(More)
Due to the high cell density, low leakage power consumption, and less vulnerability to soft errors, non-volatile memory technologies are among the most promising alternatives for replacing the traditional DRAM and SRAM technologies used in implementing main memory and caches in the modern microprocessor. However, one of the difficulties is the limited write(More)
The degradation of CMOS devices over the lifetime can cause the severe threat to the system performance and reliability at deep submicron semiconductor technologies. The negative bias temperature instability (NBTI) is among the most important sources of the aging mechanisms. Applying the traditional guardbanding technique to address the decreased speed of(More)
Non-volatile memory technologies are among the most promising technologies for implementing the main memories and caches in future microprocessors and replacing the traditional DRAM and SRAM technologies. However, one of the most challenging design issues of the non-volatile memory technologies is the limited write. In this article, we first propose to(More)
The degradation of CMOS devices over the lifetime can cause severe threat to the system performance and reliability at deep submicron semiconductor technologies. The negative bias temperature instability (NBTI) is among the most important sources of the aging mechanisms. Applying the traditional guardbanding technique to address the decreased speed of(More)
With continuous scaling down of the semiconductor technology, the soft errors induced by energetic particles have become an increasing challenge in designing current and next-generation reliable microprocessors. Due to their large share of the transistor budget and die area, cache memories suffer from an increasing vulnerability against soft errors.(More)
  • 1