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The degradation of CMOS devices over the lifetime can cause the severe threat to the system performance and reliability at deep submicron semiconductor technologies. The negative bias temperature instability (NBTI) is among the most important sources of the aging mechanisms. Applying the traditional guardbanding technique to address the decreased speed of(More)
—Due to the high cell density, low leakage power consumption, and less vulnerability to soft errors, non-volatile memory technologies are among the most promising alternatives for replacing the traditional DRAM and SRAM technologies used in implementing main memory and caches in the modern microprocessor. However, one of the difficulties is the limited(More)
The negative bias temperature instability (NBTI) in CMOS devices is one of most prominent sources of aging mechanisms, which can induce severe threats to the reliability of modern processors at deep submicron semiconductor technologies. Due to the unbalanced duty cycle ratio of the SRAM cells, the data cache suffers a heavy NBTI stress and this will further(More)
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