Guanghui Mei

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The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (V<inf>th</inf>) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The V<inf>th</inf>(More)
Effective radius models for the nanoscale elliptical Surrounding-Gate (SG) metal-oxide-semiconductor field-effect transistor (MOSFET) are developed. The characteristics of the elliptical SG MOSFET are simulated with TCAD simulation tools, the electric potential, drain to source current, and the subthreshold swing are investigated. The simple effective(More)
The threshold voltage, V<inf>th</inf> of a double-gate Schottky-Barrier (DGSB) source/drain (S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential in the channel is obtained and the results are verified via simulations, good agreement is observed. A new definition for(More)
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