Guan-Xiang Du

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We demonstrated InGaP/GaAs heterojunction bipolar transistors (HBT's) with very low burn-in and high β/R sB ratios by optimization of emitter and base properties and in situ annealing. Some HBT's exhibited β/R sB ratios of 0.47 and less than 5% burn-in. The recombination analysis of the devices revealed that the emitter and emitter-base junction were(More)
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