Gregor Pobegen

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A number of recent publications explain NBTI to consist of a recoverable and a more permanent component. While a lot of information has been gathered on the recoverable component, the permanent component has been somewhat elusive. We demonstrate that oxide defects commonly linked to the recoverable component also form an important contribution to the(More)
Despite a number of recent advances made in the understanding of the bias temperature instability (BTI), there is still no simple model available which can capture BTI degradation during DC or duty-factor (DF) dependent stress and the following recovery. By exploiting the intuitive features of the recently proposed capture/emission time (CET) maps [1, 2],(More)
The recently suggested time-dependent defect spectroscopy (TDDS) has allowed us to study the recoverable component of NBTI at the single-defect level. To go beyond our previous efforts, we have performed a long-term TDDS study covering also the kilo-second time window. We found that even in this extended window NBTI recovery is due to a collection of(More)
We study nand pMOS devices with 3.2–30 nm thick SiON or SiO2 gate dielectrics and n ++ or p doped polysilicon gates to identify the type and energetic location of defects created through bias temperature stress. The results clearly indicate a dependence of the type of BTS induced defects on the stress polarity and the gate poly doping. If holes are provided(More)
Alongside the intensive debate concerning the influence of hydrogen on NBTI we present several details which have received little or no attention in the past. We show experimental evidence that hydrogen does not only passivate interface traps but also positive oxide charges or border traps. Besides passivation, hydrogen increases the overall drift(More)
Based on experimentally observed temperature-dependent charge exchange during NBTI, which is consistent with nonradiative multiphonon processes, we propose a new concept to understand degradation data at different temperatures. We show the impact of temperature-acceleration on both degradation and recovery, making it possible to perform long-term NBTI tests(More)
Recent investigations on individual defects contributing to negative bias temperature instability (NBTI) showed that the emission and capture time constants are thermally activated via an Arrhenius law. We apply this finding to conventional micrometer-sized devices where NBTI is the response of up to millions of defects. We rapidly switch the device(More)
The exact location and type of defects created under negative bias temperature (NBT) stress in pMOS field effect transistors is still a highly debated topic. We present a detailed study on equivalent devices with different oxide thicknesses (5 to 30 nm) where we show experimentally that the basic mechanisms behind the NBT instability are the same in thin(More)
We study deep level defects at the Si/SiO2 interface of 30nm and 5nm SiO2 PMOS devices after negative bias temperature stress (NBTS). Electrical characterization using the direct-current current-voltage (DCIV) technique reveals two defects with different energy levels, recovery and degradation dynamics. To investigate their micro-physical nature, we perform(More)
We investigate the temperature accelerated recovery from hot-carrier (HC) damage with the help of local polycrystalline heating structures in n-MOSFETs designed for power applications. These devices have a rather thick gate oxide and long channel, which assures that mainly interface traps are created through the HC stress. We further verify with(More)