Gregor Keller

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The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence(More)
We present an asymmetrical InP-based three barrier resonant tunneling diode with high current density. For positive bias voltages the device operates like a symmetrical resonant tunneling diode, providing a wide region of negative differential resistance. Under zero bias condition it can be used as a sensitive high frequency detector. The nonlinearity may(More)
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