Goutam Kumar

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Structural and electrical properties of HfO 2 and HfO 2 /Gd 2 O 3 gate stacks on p-GaAs substrates have been investigated. It has been demonstrated that the presence of thin layer of Gd 2 O 3 between HfO 2 and GaAs improves metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, frequency dispersion, and(More)
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