Gourab Dutta

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A physics-based simple and accurate compact model of drain current for GaN-based high electron mobility transistors (HEMTs) is presented. The model is developed using analytical relations for charges in the 2-D electron gas and barrier layer. For the first time, a simple charge linearization approach has been used for GaN-based HEMTs. The access regions are(More)
Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN metal insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) with SiN<sub>x</sub> as gate dielectric have been investigated. It is found that the conduction in the reverse gate bias is due to Poole-Frenkel emission for both MIS-HEMTs. The dominant conduction mechanism in low to medium(More)
AlInN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have been fabricated with reactive-ion-sputtered (RIS) Al<sub>2</sub>O<sub>3</sub> as a gate dielectric. Significant reduction in the gate leakage current is achieved upon insertion of RIS-Al<sub>2</sub>O<sub>3</sub>. MIS-HEMTs also show better transconductance, drain(More)
SiN<sub>x</sub> deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) technique at low temperature (70 &#x00B0;C) was investigated as gate dielectric for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). Besides significant reduction in gate leakage current, the MIS-HEMTs showed improvement in(More)
AlGaN/GaN metal-insulator-semiconductor diodes (MISDs) with three different gate dielectrics, viz. silicon nitride (SiNx), aluminium oxide (Al<inf>2</inf>O<inf>3</inf>) and aluminium nitride (AlN) were fabricated. Capacitance-conductance method based on multi-frequency C-V measurements was used for characterizing dielectric/semiconductor interface traps.(More)
Dependence of threshold voltage (V<sub>Th</sub>) on oxide thickness (t<sub>ox</sub>) for GaN-based metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using sputter deposited Al<sub>2</sub>O<sub>3</sub> as gate dielectric is studied in detail. Different III-nitride (III-N) heterostructures (AlGaN/GaN and AlInN/GaN) with/without GaN(More)
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