Glenn Sakamoto

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R. Tayrani, M. Teshiba, G. Sakamoto, Q. Chaudhry*, R Alidio"', Y. Kang, I. Ahmad, T.Cisco, and M. Hauhe Raytheon Space & Airborne Systems, 2000 East Imperial Highway, El Segundo, CA 90245 AbstractThis paper reports the performances of several broadband monolithic SiGe MMICs suitable for phased array radar applications. The amplitude and phase control MMIC(More)
In the last decade, silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BICMOS technology has developed from being a lab curiosity to becoming a production manufacturing technology that replaces and extends the performance of silicon-based BICMOS technology. The impetus for this development has been the insatiable requirement for bandwidth in(More)
A 6-bit PIN diode phase shifter has been successfully demonstrated at microwave frequencies in a SiGe bipolar technology. A post-silicon polymer dielectric interconnect technology is implemented to achieve low loss microstrip structures on the silicon substrate. The monolithic microwave integrated circuit exhibits flat phase shift, low VSWR, and low(More)
A compact CMOS SPDT switch fabricated in 0.18 mum BiCMOS technology has been successfully demonstrated at X-Ku-band. The fully integrated chip exhibits a low insertion loss of 1.9 dB and an isolation of 22.5 dB at 17 GHz. By reverse biasing the source/drain (S/D) diode junctions, the switch achieves a PldB of 21 dBm and TOI greater than 30 dB in a very(More)
A silicon-germanium variable gain cascode amplifier has been developed to combine the functionality of an amplifier and an attenuator into one monolithic microwave integrated circuit (MMIC). The cascode amplifier, which was designed for a 7-11 GHz frequency range, achieved a gain of 12.5 dB, an input return loss of 7.5 dB, and an output return loss of 12.5(More)
A System on a Chip (SoC) is presented with the end application being RF and digital control of an Active Array Electronically Scanned Array (AESA) Antenna. The design is implemented using IBM's SiGe 5HP process. The device operates across X-Band in both transmit and receive and maintains a gain flatness of 0.5 dB across the band in transmit and has 12 dB of(More)
This paper reports the performances of a broadband monolithic SiGe PIN diode SPDT switch that is based on the IBM 5-HP SiGe foundry process. The switch contains a tightly integrated series-shunt vertical PIN structure in each arm having a junction area of 50 /spl mu/m/sup 2/ and 80 /spl mu/m/sup 2/ respectively. On-chip resistive bias networks are used to(More)
Field experiments were conducted to assess the tolerance of seashore dropseed (Sporobolus virginicus) to preand postemergence herbicides labeled for roadside right-of-way use. Dithiopyr (0.25 and 0.50 lb/acre a.i.), trifluralin + isoxaben (2.0 + 0.5 and 4.0 + 1.0 lb/acre a.i.), oxyfluorfen (0.25 and 0.50 lb/acre a.i.), oxadiazon (2.0 and 4.0 lb/acre a.i.),(More)
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