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This paper reviews the status and challenges of the modeling partially-depleted silicon-on-insulator transistors. Many challenges stem from the floating-body potential, which offers advantages in terms of performance and leakage, but presents complex electrical behavior. Circuit simulator considerations and the importance of model standardization are also… (More)
Physics-based compact modeling, as opposed to the conventional empirical approach, is emphasized for nanoscale nonclassical CMOS. UFDG, a physics-based compact model for generic double-gate MOSFETs with ultra-thin bodies, is overviewed, and its applications to double- and (multiple) independent-gate FinFET device and circuit design are demonstrated.