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The dielectric constant in and conductivity sigma of undoped C(60) single crystals have been measured as a function of temperature, 10 K < T < 330 K, and frequency, 0.2 kilohertz < f < 100 kilohertz. On cooling below the first-order structural phase transition at 260 K, a Debye-like relaxational contribution to the dielectric response is observed, which(More)
Variations in the mechanical properties of copper related to plating chemistry and copper thickness are found to control stress migration performance in dual damascene copper interconnects. These observations cannot be explained by vacancy diffusion alone. Instead, the high tensile stress of the copper and elastic vs. plastic energy dissipation needs to be(More)
© 2012 Padilla et al.; licensee InTech. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Abstract Photovoltaic performance is shown to(More)
– The depletion depth of silicon strip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Admittance measurements are used to extract deep level parameters in order to correct the dependence of capacitance voltage measurements on the frequency of the AC signal applied for irradiated silicon detectors. An(More)
  • G. Alers
  • 2005
Summary form only given. As interconnects become responsible for a larger portion of signal delays in advanced circuits the pressure for aggressive scaling will increase. Current densities will increase as dimensions are reduced and stress management will be more critical as the compliance of low-k materials decreases. However, reducing the interconnect(More)
Initial growth stages of epitaxial BaTiO 3 films on vicinal SrTiO 3 (001) substrate surfaces. thin films deposited on Si by ion beam sputtering: microstructure and dielectric properties. at the tantalum oxide/silicon interface in gate dielectric structures. [10] R. N. Sharma and A. C. Rastogi. Structure and composition of interfacial silicon oxide layer in(More)
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